Si2341

Shenzhen Tuofeng Semiconductor Technology Co., Ltd Si2341 P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.072 @ VGS = - 10 V - 30 0.120 @ VGS = - 4.5 V ID (A)b - 2.8 - 2.0 FEATURES D TrenchFETr Power MOSFETS APPLICATIONS D Load Switch D PA Switch TO-236 (SOT-23) G1 S2 3D Top View Ordering Information: Si2341 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 sec Steady State Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)b Pulsed Drain Currenta Continuous Source Current (Diode Conduction)b Power Dissipationb Operating Junction and Storage Temperature Range TA= 25_C TA= 70_C TA= 25_C TA= 70_C VDS VGS ID IDM IS PD TJ, Tstg - 2.8 - 2.2 - 0.75 0.9 0.57 - 30 "20 - 12 - 55 to 150 - 2.5 - 2.0 - 0.6 0.71 0.45 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb Maximum Junction-to-Ambientc Maximum Junction-to-Foot (Drain) Notes a. Pulse width limited by maximum juncti...