SI2333

SI2333 P-ChannelEnhancement Mode Power MOSFET General Features ● VDS = -12V,ID = -6A RDS(ON) < 45mΩ @ VGS=-2.5V RDS(ON) < 30mΩ @ VGS=-4.5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Application ● PWM applications ● Load switch ● Power management D SOT-23-3L GS REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.65 2.95 1.50 1.70 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimete Min. 1.90 1.00 0.10 0.40 0.85 Max. REF. 1.30 0.20 1.15 0° 10° Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current -Continuous Drain Current -Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD TJ,TSTG Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Off Characteristics ...