Si2312

Si2312 N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement SOT-23 package PRODUCT SUMMARY VDSS ID RDS(ON) (m ) Typ 20V 3.6A 35@ VGS=4.5V 56 @ VGS=2.5V NOTE The Si2312is available in a lead-free package D S G ABSOLUTE MAXIUM RATINGS TA=25 Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuousª@Tj=125 - Pulse d b Drain-source Diode Forward Currentª Maximum Power Dissipationª Operating Junction and Storage Temperature Range unless otherwise noted Symbol VDS VGS ID Limit 20 ±8 3.6 IDM 12 IS 1.25 PD 1.25 TJ,TSTG -55 to 150 Unit V V A A A W THERMAL CHARACTERISTICS Thermal Resistance, Junction-to Ambientª Rth JA 100 /W 1 Si2312 ELECTRICAL CHARACTERISTICS (TA=25 unless otherwise noted) Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERITICS Gate Threshold Voltage Drain-Sourc...