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SI2300 Dataheets PDF



Part Number SI2300
Manufacturers CCSemi
Logo CCSemi
Description N-Channel MOSFET
Datasheet SI2300 DatasheetSI2300 Datasheet (PDF)

MOSFET N-Channel Enhancement Mode Field Effect Transistor SI2300 Features ◆ VDS=20V,RDS(ON)=40mΩ@VGS=4.5V,ID=5.0A ◆ VDS=20V,RDS(ON)=60mΩ@VGS=2.5V,ID=4.0A ◆ VDS=20V,RDS(ON)=75mΩ@VGS=1.8V,ID=1.0A Absolute Maximum Ratings Ta=25℃ Parameter Drain-Source Voltage Gate-Source Voltage Drain-Current -Continuous* TJ=125℃ -Pulsed Power Dissipation* Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range *Surface Mounted on FR4 Board, t≤10sec. Symbol VDS VGS ID IDM PD RthJ.

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MOSFET N-Channel Enhancement Mode Field Effect Transistor SI2300 Features ◆ VDS=20V,RDS(ON)=40mΩ@VGS=4.5V,ID=5.0A ◆ VDS=20V,RDS(ON)=60mΩ@VGS=2.5V,ID=4.0A ◆ VDS=20V,RDS(ON)=75mΩ@VGS=1.8V,ID=1.0A Absolute Maximum Ratings Ta=25℃ Parameter Drain-Source Voltage Gate-Source Voltage Drain-Current -Continuous* TJ=125℃ -Pulsed Power Dissipation* Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range *Surface Mounted on FR4 Board, t≤10sec. Symbol VDS VGS ID IDM PD RthJA Tj.Tstg Rating 20 ±10 3.8 15 1.25 100 -55 to 150 Unit V V A A W ℃/W ℃ www.canctech.com Revision 2016/8/15 @2016-2017 CCSemi . MOSFET Electrical Characteristics Ta=25℃ Parameter Symbol Test conditions Drain-Source Breakdown Voltage VDSS VGS=0V,ID=250uA Zero Gate Voltage Drain Current IDSS VDS=20V,VGS=0V Gate-Body Leakage IGSS VGS=±10V,VDS=0V Gate Threshold Voltage* VGS(th) VGS=VDS,ID=250uA VGS=4.5V,ID=5.0A Drain-Source On-state Resistance* RDS(ON) VGS=2.


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