Document
Plastic-Encapsulate Mosfets
FEATURES
Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current
Absolute Maximum Ratings (TA=25oC, unless otherwise noted)
Parameter
Symbol Ratings Units
Drain-Source Voltage
VDS 20 V
Gate-Source Voltage
VGS 8 V
Drain Current (Continuous) Drain Current (Pulsed) 1 Total Power Dissipation @TA=25 oC
ID 6
A
IDM 18
A
PD 1.25 W
Maximum Diode Forward Current
IS 1.6 A
Operating Junction and Storage Temperature Range Thermal Resistance Junction to Ambient (PCB mounted)2
Tj, Tstg -55 to +150 °C RθJA 140 °C/W
1: Repetitive Rating: Pulse width limited by the maximum junction temperation. 2: 1-in2 2oz Cu PCB board
Electrical Characteristics (TA=25°C, unless otherwise noted)
Symbol
Characteristic
• Off Characteristics
Test Conditions
BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current
•On Characteristics3
.