20V N-Channel Enhancement Mode MOSFET
VDS= 20V RDS(ON), Vgs@ 4.5V, Ids@ 3.0A RDS(ON), Vgs@ 2.5V, Ids@ 2.0A
70m Ω 80mΩ
Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing capability Ideal for Li ion battery pack applications
Package Dimensions
SI2300
D
SOT-23(PACKAGE)
GS
REF.
A...
