Document
Alfa-MOS
Technology
General Description
AFN4900W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( SOP-8P )
AFN4900W
60V N-Channel Enhancement Mode MOSFET
Features
60V/6.8A,RDS(ON)=115mӨ@VGS=10V 60V/5.6A,RDS(ON)=140mӨ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design
Application
Motor and Load Control AD/DC Inverter Systems. Power Management in White LED System
Pin Define
Pin 1 2 3 4 5 6 7 8
Symbol S1 G1 S2 G2 D2 D2 D1 D1
Ordering Information
Part Ordering No.
Part Marking
Package
AFN4900WS8RG
4900W
SOP-8P
ϡʳ A Lot code
ϡʳ B Date code
ϡʳ AFN4900WS8RG : 13” Tape & Reel ; Pb- Free ; Halogen- Free
©Alfa-MOS Technology Corp. Rev.A Jul. 2012
Description Source 1 Gate 1 Source 2 Gate .