AFN4996W

Alfa-MOS Technology General Description AFN4996W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOP-8P ) AFN4996W 90V N-Channel Enhancement Mode MOSFET Features 90V/7.6A,RDS(ON)=68mΩ@VGS=10V 90V/6.8A,RDS(ON)=75mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design Application Motor and Load Control AD/DC Inverter Systems. Power Management in White LED System Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Ordering Information Part Ordering No. Part Marking Package AFN4996WS8RG 4996W SOP-8P ϡʳ A Lot code ϡʳ B Date code ϡʳ AFN4996WS8RG : 13” Tape & Reel ; Pb- Free ; Halogen- Free ©Alfa-MOS Technology Corp. Rev. A Jan. 2015 Description Source Source Source Gate Drain Drain...