N-Channel MOSFET
Alfa-MOS
Technology
General Description
AFN4116WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to...
Description
Alfa-MOS
Technology
General Description
AFN4116WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( SOP-8P )
AFN4116WS
20V N-Channel Enhancement Mode MOSFET
Features
20V/ 15A,RDS(ON)=8.5mΩ@VGS=4.5V 20V/ 12A,RDS(ON)=11mΩ@VGS=2.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design
Application
Synchronous Buck - Low Side
Pin Define
Pin 1 2 3 4 5 6 7 8
Symbol S S S G D D D D
Description Source Source Source Gate Drain Drain Drain Drain
Ordering Information
Part Ordering No.
Part Marking
Package
AFN4116WSS8RG
4116WS
SOP-8P
ϡʳ A Lot code
ϡʳ B Date code
ϡʳ AFN4116WSS8RG : 13” Tape & Reel ; Pb- Free ; Halogen- Free
©Alfa-MOS Technology Corp. Rev.A Dec. 2014
Unit Tape & Reel
Quantity 2500 EA
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