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AFN4116WS

Alfa-MOS

N-Channel MOSFET

Alfa-MOS Technology General Description AFN4116WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to...


Alfa-MOS

AFN4116WS

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Description
Alfa-MOS Technology General Description AFN4116WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOP-8P ) AFN4116WS 20V N-Channel Enhancement Mode MOSFET Features 20V/ 15A,RDS(ON)=8.5mΩ@VGS=4.5V 20V/ 12A,RDS(ON)=11mΩ@VGS=2.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design Application Synchronous Buck - Low Side Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Description Source Source Source Gate Drain Drain Drain Drain Ordering Information Part Ordering No. Part Marking Package AFN4116WSS8RG 4116WS SOP-8P ϡʳ A Lot code ϡʳ B Date code ϡʳ AFN4116WSS8RG : 13” Tape & Reel ; Pb- Free ; Halogen- Free ©Alfa-MOS Technology Corp. Rev.A Dec. 2014 Unit Tape & Reel Quantity 2500 EA ...




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