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AFN4172WS

Alfa-MOS

N-Channel MOSFET

Alfa-MOS Technology General Description AFN4172WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to...


Alfa-MOS

AFN4172WS

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Description
Alfa-MOS Technology General Description AFN4172WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOP-8P ) AFN4172WS 30V N-Channel Enhancement Mode MOSFET Features  30V/15A,RDS(ON)=12mΩ@VGS=10V  30V/13A,RDS(ON)=15mΩ@VGS=4.5V  Super high density cell design for extremely low RDS (ON)  SOP-8P package design Application  DC/DC Converter  Load Switch  Power Management in Notebook Computer Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Ordering Information Part Ordering No. Part Marking Package AFN4172WSS8RG 4172WS SOP-8P ※ A Lot code ※ B Date code ※ AFN4172WSS8RG : 13” Tape & Reel ; Pb- Free ; Halogen –Free ©Alfa-MOS Technology Corp. Rev.A Jan . 2012 Description Source Source Source Gate Dra...




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