N-Channel MOSFET
Alfa-MOS
Technology
AFN6870S
100V N-Channel Enhancement Mode MOSFET
General Description
AFN6870S, N-Channel enhancemen...
Description
Alfa-MOS
Technology
AFN6870S
100V N-Channel Enhancement Mode MOSFET
General Description
AFN6870S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( DFN5X6-8L )
Features
z 100V/20A,RDS(ON)=6.0mΩ@VGS=10V z 100V/15A,RDS(ON)=8.0mΩ@VGS=4.5V z Super high density cell design for extremely low
RDS (ON) z DFN5X6-8L package design
Application
z Networking / Telecom / Server z LED Lighting Applications z Quick Charger Applications z DC-DC Primary Side Switch
Pin Define
Pin 1~3
4 5~8
Symbol S G D
Description Source Gate Drain
Ordering Information
Part Ordering No.
Part Marking
Package
AFN6870SFN568RG
6870S
DFN5X6-8L
※ 6870S
: Parts Code
※ YYMMDD : Date Code
※ AFN6870SFN568RG : 13”Tape & Reel ; Pb- Free ; Halogen- Free
©Alfa-...
Similar Datasheet