Document
Alfa-MOS
Technology
General Description
AFP7117WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( DFN3.3X3.3-8L )
AFP7117WS
150V P-Channel Enhancement Mode MOSFET
Features
-150V/-1.4A,RDS(ON)=700 mΩ@VGS=-10V -150V/-1.0A,RDS(ON)=750 mΩ@VGS=-6V Super high density cell design for extremely
low RDS (ON) Exceptional on-resistance and maximum DC
current capability DFN3.3X3.3-8L package design
Application
DC-DC Converter
POL
Pin Define
Pin 1 2 3 4 5 6 7 8
Symbol S S S G D D D D
Description Source Source Source Gate Drain Drain Drain Drain
Ordering Information
Part Ordering No.
Part Marking
Package
AFP7117WSFN308RG
7117WS
DFN3.3X3..