Document
Alfa-MOS
Technology
General Description
AFN3814W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( DFN3X3-8L )
AFN3814W
20V N-Channel Enhancement Mode MOSFET
Features
20V/ 14A,RDS(ON)=14mΩ@VGS=4.5V 20V/ 12A,RDS(ON)=18mΩ@VGS=2.5V 20V/ 10A,RDS(ON)=30mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) DFN3X3-8L package design
Application
Load Switch Portable Equipment Battery Powered System
Pin Define
Pin 1 2 3 4 5 6 7 8
Symbol S1 G1 S2 G2
D1/D2 D1/D2 D1/D2 D1/D2
Description Source 1 Gate 1 Source 2 Gate 2
Drain 1 / Drain 2 Drain 1 / Drain 2 Drain 1 / Drain 2 Drain 1 / Drain 2
Ordering Information
Part Ordering No.
Part Marking
Package
AFN3814WFN338RG
3814W
DFN3X3-8L
ϡʳ YY ϡʳ MM ϡʳ DD
year code month co.