AFN5800W

Alfa-MOS Technology General Description AFN5800W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( DFN2X5-6L ) AFN5800W 20V N-Channel Enhancement Mode MOSFET Features 20V/8.0A,RDS(ON)=19mΩ@VGS=10V 20V/7.0A,RDS(ON)=20mΩ@VGS=4.5V 20V/6.0A,RDS(ON)=24mΩ@VGS=2.5V 20V/4.5A,RDS(ON)=28mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability DFN2X5-6L package design Application Load Switch Portable Equipment Battery Powered System Pin Define Pin 1 2 3 4 5 6 Symbol S1 S1 G1 G2 S2 S2 Ordering Information Part Ordering No. Part Marking Package AFN5800WFN256RG AFN5800W YYMMDD DFN2X5-6L ϡ...