Document
Alfa-MOS
Technology
General Description
AFN2440WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( DFN2X2-6L )
AFN2440WS
40V N-Channel Enhancement Mode MOSFET
Features
z 40V/ 9A,RDS(ON)= 20mΩ@VGS=10V z 40V/ 7A,RDS(ON)= 25mΩ@VGS=4.5V z Super high density cell design for extremely
low RDS (ON) z DFN2X2-6L package design
Application
z DC/DC Converter z High Frequency Switching
Pin Define
Pin 1,2,5,6
4 3
Symbol D S G
Description Drain Source Gate
Ordering Information
Part Ordering No.
Part Marking
Package
AFN2440WSFN226RG
W40YW
DFN2X2-6L
※ W40 part code ※ Y year code ※ W week code
※ AFN2440WSFN226RG : 7” Tape & Reel ; Pb- Free ; Halogen- Free
Unit Tape & Reel
Quantity 4000 EA
©Alfa-MOS Technology Corp. Rev.B Jan. 2.