N-Channel Enhancement Mode MOSFET
Alfa-MOS
Technology
General Description
AFN2448WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to...
Description
Alfa-MOS
Technology
General Description
AFN2448WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( DFN2X2-6L )
AFN2448WS
20V N-Channel Enhancement Mode MOSFET
Features
z 20V/3.0A,RDS(ON)=11mΩ@VGS=4.5V z 20V/3.0A,RDS(ON)=13mΩ@VGS=2.5V z 20V/3.0A,RDS(ON)=20mΩ@VGS=1.8V z Super high density cell design for extremely
low RDS (ON) z ESD Protection ( >2KV ) Diode design–in z DFN2X2-6L package design
Application
z For Smart Phones and Mobile Computing - Load Switches - DC/DC Converters
Pin Define
Pin 1,2,5,6
4 3
Symbol D S G
Description Drain Source Gate
Ordering Information
Part Ordering No.
Part Marking
Package
AFN2448WSFN226RG
W48YW
DFN2X2-6L
※ W48 part code ※ Y year code ※ W week code
※ AFN2448WSFN226RG : 7” Tape &...
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