N-Channel Enhancement Mode MOSFET
Alfa-MOS
Technology
AFN2918W
30V N-Channel Enhancement Mode MOSFET
General Description
AFN2918W, N-Channel enhancement...
Description
Alfa-MOS
Technology
AFN2918W
30V N-Channel Enhancement Mode MOSFET
General Description
AFN2918W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( DFN2X2-6L )
Features
30V/4.0A,RDS(ON)=50mΩ@VGS=10V 30V/3.0A,RDS(ON)=56mΩ@VGS=4.5V 30V/2.5A,RDS(ON)=64mΩ@VGS=2.5V 30V/1.0A,RDS(ON)=76mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current
capability DFN2X2-6L package design
Application
Load Switch with Low Voltage Drop Load Switch for 1.2 V/1.5 V/1.8 V Power Lines Smart Phones, Tablet PCs, Portable Media Players
Pin Define
Pin 1 2 3 4 5 6
Symbol S1 G1 D2 S2 G2 D1
Description Source1 Gate1 Drain2 Source2 Gate2 Drain1
Ordering Information
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