P-Channel Enhancement Mode MOSFET
Alfa-MOS
Technology
General Description
AFP2911W, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to ...
Description
Alfa-MOS
Technology
General Description
AFP2911W, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( DFN2X2-6L )
AFP2911W
20V P-Channel Enhancement Mode MOSFET
Features
z -20V/-4.5A,RDS(ON)=80mΩ@VGS=-4.5V z -20V/-3.8A,RDS(ON)=105mΩ@VGS=-2.5V z -20V/-2.5A,RDS(ON)=145mΩ@VGS=-1.8V z Super high density cell design for extremely
low RDS (ON) z Exceptional on-resistance and maximum DC
current capability z DFN2X2-6L package design
Application
z Load Switch z Portable Equipment z Battery Powered System
Pin Define
Pin 1 2 3 4 5 6
Symbol S1 G1 D2 S2 G2 D1
Ordering Information
Part Ordering No.
Part Marking
Package
AFP2911WFN226RG
W11YW
DFN2X2-6L
※ W11 parts c...
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