N-Channel Enhancement Mode MOSFET
Alfa-MOS
Technology
General Description
AFN2408WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to...
Description
Alfa-MOS
Technology
General Description
AFN2408WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( DFN2X2-6L )
AFN2408WS
30V N-Channel Enhancement Mode MOSFET
Features
z 30V/5.6A,RDS(ON)=25mΩ@VGS=10V z 30V/5.2A,RDS(ON)=28mΩ@VGS=4.5V z 30V/4.2A,RDS(ON)=34mΩ@VGS=2.5V z Super high density cell design for extremely
low RDS (ON) z DFN2X2-6L package design
Application
z DC/DC Converter z High Frequency Switching
Pin Define
Pin 1,2,5,6
4 3
Symbol D S G
Description Drain Source Gate
Ordering Information
Part Ordering No.
Part Marking
Package
AFN2408WSFN226RG
W08YW
DFN2X2-6L
※ W08 part code ※ Y year code ※ W week code
※ AFN2408WSFN226RG : 7” Tape & Reel ; Pb- Free ; Halogen- Free
Unit Tape & Reel
Quantity 4000 EA
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