AFP2431WS

Alfa-MOS Technology General Description AFP2431WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( DFN2X2-6L ) AFP2431WS 20V P-Channel Enhancement Mode MOSFET Features z -20V/-3.0A,RDS(ON)=25mΩ@VGS=-4.5V z -20V/-3.0A,RDS(ON)=33mΩ@VGS=-2.5V z -20V/-2.5A,RDS(ON)=42mΩ@VGS=-1.8V z Super high density cell design for extremely low RDS (ON) z Exceptional on-resistance and maximum DC current capability z DFN2X2-6L package design Application z Load Switch, PA Switch and Battery Switch for Portable Devices Pin Define Pin 1,2,5,6 4 3 Symbol D S G Description Drain Source Gate Ordering Information Part Ordering No. Part Marking Package AFP2431WSFN226RG W31YW D...