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AFP1601E

Alfa-MOS
Part Number AFP1601E
Manufacturer Alfa-MOS
Description 20V P-Channel Enhancement Mode MOSFET
Published Nov 22, 2018
Detailed Description Alfa-MOS Technology General Description AFP1601E, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to ...
Datasheet PDF File AFP1601E PDF File

AFP1601E
AFP1601E

Overview
Alfa-MOS Technology General Description AFP1601E, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( DFN1.
0X0.
6-3L ) AFP1601E 20V P-Channel Enhancement Mode MOSFET Features -20V/-0.
4A, RDS(ON)= 580 mΩ@ VGS =-4.
5V -20V/-0.
3A, RDS(ON)= 680 mΩ@ VGS =-2.
5V -20V/-0.
1A, RDS(ON)= 950 mΩ@ VGS =-1.
8V Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits ESD Protection Diode design–in Low Battery Voltage...


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