GT15J331
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT15J331
High-Power Switching Applications Motor Control Applications
Fourth-generation IGBT Enhancement mode type High speed: tf = 0.10 μs (typ.) Low saturation voltage: VCE (sat) = 1.75 V (typ.) FRD included between emitter and collector
Absolute Maximum Ratings (Ta = 25...
