TEMIC
Siliconix
N-Channel Enhancement-Mode Transistor
175°C Maximum Junction Temperature Product Summary
V(BR)DSS (V)...
TEMIC
Siliconix
N-Channel Enhancement-Mode
Transistor
175°C Maximum Junction Temperature Product Summary
V(BR)DSS (V) 60
fDS(on) (0) 0.10
IDa (A) 15
SMD15N06
DPAK (TO-252)
D
D
G~
GS ThpView
S N-Channel MOSFET
Absolute Maximum Ratings (l'c = 25°C Unless Otherwise Noted)
Parameter
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Currentb
ITe = 25'C ITe= l00'C
Pulsed Drain Current (maximum current limited by package)
Maximum Power Dissipation Operating Junction and Storage Temperature Range
ITe = 25'C ITA= 25'C
Symbol
Vos VGS
10
10M Po TJ, Tstg
Limit
60 ±20 15 7.5 16 40 2.0b -55 to 175
Unit
V
A
W
'c
Thermal Resistance Ratings
Parameter
Junction-to-Ambient Free Airb Junchon-to-Case
Symbol
RthJA RthJe
Limit
60 3.0
Unit 'CfW
Notes:
a. Calculated Rating forTe = 25°C, for comparison purposes only. This cannot be used as continuous rating (see Absolute Maximum Ratings and 'iYpical Characteristics).
b. When mounted on I" square PCB (FR-4 material).
(05/31...
