SMD10P06L
P-Channel Enhancement-Mode Transistor
Product Summary
VDS (V) –60
rDS(on) (W) 0.28 @ VGS = –10 V 0.35 @ VGS...
SMD10P06L
P-Channel Enhancement-Mode
Transistor
Product Summary
VDS (V) –60
rDS(on) (W) 0.28 @ VGS = –10 V 0.35 @ VGS = –4.5 V
IDa (A) –10 –7.5
DPAK (TO-252)
D
S G
GS Top View
D P-Channel MOSFET
Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currentb
TA = 25_C TA = 100_C
Pulsed Drain Current (maximum current limited by package)
Maximum Power Dissipation Operating Junction and Storage Temperature Range
TC = 25_C TA = 25_C
VDS VGS ID IDM PD TJ, Tstg
–60 "20 –2.0 –1.2 –16
40 2.0b –55 to 175
V
A
W _C
Thermal Resistance Ratings
Parameter
Symbol
Typical
Maximum Unit
Junction-to-Ambient Free Airb Junction-to-Case
RthJA RthJC
2.3
60 _C/W
3.0
Notes:
a. Calculated Rating for TC = 25_C, for comparison purposes only. This cannot be used as continuous rating (see Absolute Maximum Ratings
and Typical Characteristics).
b. Surface mounted on PC board o...
