MOD500C

TEMIC Siliconix MODSOOB/SOOC Four N-Channel Enhancement-Mode Transistors Product Summary V(BR)DSS (V) 500 rDS(on) (Q) 0.43 ID(A) 13 D DD S S Leadform Options GG G~G G MOD500B . . Bent Down MOD500C . .. Bent Up SS DD S N-Channel MOSFET =Absolute Maximum Ratings (Tc 25°C Unless Otherwise Noted) Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current (TJ ~ 150'C) Pulsed Drain Current Avalanche Current Maximum Power Dissipation Operating Junction and Storage Thmperature Range Isolation Voltage ITc~25'C ITc ~ 100'C ITc~25'C ITc ~ 100'C Symbol Vns VGS In IDM IA Pn TJ,Tstg VISOL Single Die All Die 500 500 ±20 ±20 13 41 8 26 52 164 13 150 400 60 100 -55 to 150 1000 Unit V A W 'C V Thermal Resistance Ratings Parameter Maximum Junction-ta-Ambient Maximum Junction-to-Case Case-to-Sink Symb(ll RthJA RthJC RthCS P-36734-Rev. C (05130/94) Typical 01 Single Die 30 0.83 All Die 30 0.31 Unit 'C{W 6-65 TEMIC MOD500B/500C Siliconix Specifi...