Document
TEMIC
Siliconix
MODSOOB/SOOC
Four N-Channel Enhancement-Mode Transistors
Product Summary
V(BR)DSS (V) 500
rDS(on) (Q) 0.43
ID(A) 13
D
DD
S S Leadform Options
GG
G~G
G
MOD500B . . Bent Down MOD500C . .. Bent Up
SS
DD
S N-Channel MOSFET
=Absolute Maximum Ratings (Tc 25°C Unless Otherwise Noted)
Drain-Source Voltage Gate-Source Voltage
Parameter
Continuous Drain Current (TJ ~ 150'C)
Pulsed Drain Current Avalanche Current
Maximum Power Dissipation
Operating Junction and Storage Thmperature Range Isolation Voltage
ITc~25'C ITc ~ 100'C
ITc~25'C ITc ~ 100'C
Symbol Vns VGS
In
IDM IA
Pn
TJ,Tstg VISOL
Single Die
All Die
500 500 ±20 ±20 13 41
8 26 52 164 13 150 400 60 100
-55 to 150 1000
Unit V
A
W 'C V
Thermal Resistance Ratings
Parameter Maximum Junction-ta-Ambient Maximum Junction-to-Case Case-to-Sink
Symb(ll
RthJA RthJC RthCS
P-36734-Rev. C (05130/94)
Typical 01
Single Die 30 0.83
All Die 30 0.31
Unit 'C{W
6-65
TEMIC
MOD500B/500C
Siliconix
Specifi.