Si6953DQ

Si6953DQ September 2001 Si6953DQ Dual 20V P-Channel PowerTrench MOSFET General Description This P-Channel MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V – 20V). Applications Load switch Battery protection DC/DC conversion Power management Features –1.9 A, –20 V, RDS(ON) = 170 mΩ @ VGS = –10 V. RDS(ON) = 320 mΩ @ VGS = –4.5V. Extended VGSS range (±20V) for battery applications Low gate charge High performance trench technology for extremely low RDS(ON) Low profile TSSOP-8 package G2 S2 S2 D2 TSSOP-8 G1 S1 S1 D1 Pin 1 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed (Note 1) PD Power Dissipation for Single Operation (Note 1a) (Note 1b) TJ, TSTG...