NGTB20N120IHWG

NGTB20N120IHWG IGBT - Induction Cooking This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, provides and superior performance in demanding switching applications, and offers low on−state voltage with minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Features Extremely Efficient Trench with Fieldstop Technology Low Switching Loss Reduces System Power Dissipation Optimized for Low Losses in IH Cooker Application This is a Pb−Free Device Typical Applications Inductive Heating Consumer Appliances Soft Switching ABSOLUTE MAXIMUM RATINGS Rating Collector−emitter voltage @ TJ = 25°C Collector current @ TC = 25°C @ TC = 100°C Pulsed collector current, Tpulse limited by TJmax, 10 ms Pulse, VGE = 15 V Diode forward current @ TC = 25°C @ TC = 100°C Diode pulsed current, Tpulse limited by TJmax, 10 ms Pulse, VGE = 0 V Gate−emitter voltage Transi...