Si9943DY

TEMIC Siliconix Si9943DY Dual Enhancement-Mode MOSFET (N- and P-Channel) Product Summary Vns(V) N-Channel 20 P-Channel -20 rnS(on) (Q) 0.125 @vGS = 10V 0.250@VGS = 4.5 V 0.160@VGS = -10 V 0.300 @ VGS = -4.5 V In (A) ±3.0 ±2.0 ±2.8 ±2.0 80-8 0Sl Gl 2 S2 3 G2 4 Dl 7 Dl 6 D2 5 D2 ThpView Dl Dl S2 G1o---J Sl N-Channel MOSFET D2 D2 P-Channel MOSFET H 0 0 ~ ~ :Hs Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted) Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current (TJ = 150'C) Pulsed Drain Current Continuous Source Current (Diode Conduction) Maximum Power Dissipation (Surface Mounted on FR4 Board) Operating Junction and Storage Thmperature Range ITA=25'C ITA=70'C ITA=25'C ITA= 70'C Symbol Vns VGS In InM Is Pn TJ.T,tg N-Cbannel P-Cbannel 20 -20 ±20 ±20 ±3.0 ±2.B ±2.5 ±2.3 ±10 ±10 1.6 -1.6 2.0 1.3 -55 to 150 Unit V A W 'C Thermal Resistance Ratings Parameter Maximum Junctton-to-Ambient (Surface Mounted on FR...