Si9936DY

Si9936DY June 1999 Si9936DY* Dual N-Channel Enhancement Mode MOSFET General Description These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Applications • Battery switch • Load switch • Motor controls Features • 5.0 A, 30 V. RDS(ON) = 0.050 Ω @ VGS = 10 V RDS(ON) = 0.080 Ω @ VGS = 4.5 V • Low gate charge. • Fast switching speed. • High power and current handling capability. ' ' ' '   62 * 6 * 6 $EVROXWH 0D[LPXP 5DWLQJV $U Ã2Ã!$ƒ8ȁyr††Ã‚‡ur…v†rÁ‚‡rq 6\PERO 3DUDPHWHU W'66 W*66 D' Q' 9…hvT‚ˆ…prÃW‚y‡htr Bh‡rT‚ˆ…prÃW‚y‡htr 9…hvÃ8ˆ……r‡ Ã8‚‡vˆ‚ˆ†Ã ÃQˆy†rq Q‚r…Ã9v††vƒh‡v‚Ãs‚…Ã...