Document
lN2620, A, B(SILICON)
thru
lN2624, A, B
Temperature-compensated zener reference diodes utilizing an oxide-passivated junction for long-term voltage stability. Construction consists of welded hermetically sealed metal and glass case.
MAXIMUM RATINGS Junction Temperature: -55 to+1750C Storage Temperature: -65 to +1750C DC Power Dissipation: 750 mW @ TA = 250C
MECHAN ICAL CHARACTE RISTICS CASE: Hermetically sealed, welded metal and glass DIMENSIONS: See outline drawing.
FI NISH: All external surfaces are corrosion resistant and leads are readily sold· erable and weldable.
POLARITY: Cathode to case
WEIGHT: 1.5 Grams (approx)
MOUNTING POSITION: Any
=ELECTRICAL CHARACTERISTICS (TA 25°C unless otherwise noted)
JEDEC Type No.
Maximum Voltage Change
AVZ (Volts)
(Note 1)
Ambient
Test
Tem~rature
°c
±loC
Temperature
Coefficient
%rC
(Note 1)
Vz = 9.3 V ±5.0%* @ IZT = 10 rnA
1N2620 1N2621 1N2622 1N2623 1N2624
1N2620A 1N2621A 1N2622A 1N2623A 1N2624A
1N2620B 1N2621B 1N2622B 1N2623B 1N26.