MB82B84

July 1990 Edition 1.0 DATA SHEET cP FUJITSU MB82B84-151-20 GMOS 256K-BIT HIGH-SPEED BiGMOS SRAM 64K Words x 4 Bits BiCMOS High-Speed Static Random Access Memory with Automatic Power Down The Fujitsu MB82B84 is a 65,536 words x 4 bits static random access memory fabricated with a CMOS silicon gate process. For lower power dissipation and higher speed, peripheral circuits use BiCMOS technology. To obtain a smaller chip size, cells use NMOS transistors and resistors. The MB82B84 is housed in 300 mil plastic DIP and small outline J-Iead (SOJ) packages. The memory uses asynchronous circuitry and requires a +5 V power supply. All pins are TTL compatible. The MB82B84 has low power dissipation, low cost, and high performance, and it is ideally suited for use in microprocessor systems and other applications where fast access time and ease of use are required. Organization: 65,536 words x 4 bits Access time: 1M a lACS - 15 ns max. (MB82B84-15) tM - tACS - 20 ns max. (MB82B84-20)...