MB82B79

May 1990 Edition 1.0 DATA SHEET cO FUJITSU M882879-151-20 72K-BIT HIGH-SPEED BiGMOS SRAM 8K Words x 9 Bits High-Speed CMOS Static Random Access Memory The Fuj~su MB82B79 is a8, 192words x 9 b~ static random access memory fabricated w~h a CMOS silicon gate process. For lower power dissipation and higher speed, the peripheral circu~s use BiCMOS technology. To obtain a smaller chip size, cells use NMOS transistors and resistors. The MB82B79 has 300 mil plastic DIP and SOJ packages, and a 450 mil SOP package. The memory uses asynchronous circuitry and requires a +5 V power supply. All pins are TTL compatible. The MB82B79 has low power dissipation, low cost, and high performance, and it is ideally su~ed for use in microprocessor systems and other applications where fast access time and ease of use are required. Organization: 8,192 words x 9 b~s Static operation: no clocks or refresh required Access time: tAA - tACS1 - 15 ns max. 1ACS2 -toe = 8 ns max. (MB82B79·15) 1M...