April 1990 Edition 2.0
DATA SHEET
MB8287-251-35 CMOS 288K-BIT HIGH-SPEED SRAM
cO
FUJITSU
32K Words x 8 Bits Static Ran...
April 1990 Edition 2.0
DATA SHEET
MB8287-251-35 CMOS 288K-BIT HIGH-SPEED SRAM
cO
FUJITSU
32K Words x 8 Bits Static Random Access Memory with Automatic Power Down
The Fujitsu MB8287 is a 32,768 words x 8 bits static random access memory with parity generator and checker, and fabricated with CMOS technology. To obtain a smaller chip size, the cell uses NMOS
transistors and resistors. This device is housed in a 300 mil DIP package with low (605 mW max.) power dissipation. All pins are TTL compatible and a single +5 V power supply is required.
A separate chip select ~ pin simplffies multipackage systems design by permitting the selection of an individual package when outputs are OR-tied, and then automatically powering down the other deselected packages.
The MB8287 offers low power dissipation, low cost, and high performance.
Organization: 32,768 words x 8 bits
Static operation: no clocks or timing strobe required
Access time:
tM -I.\csl _25 ns max, tACS2 - 14 ns max. (M...