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MB8287

Fujitsu

CMOS 288K-BIT HIGH-SPEED SRAM

April 1990 Edition 2.0 DATA SHEET MB8287-251-35 CMOS 288K-BIT HIGH-SPEED SRAM cO FUJITSU 32K Words x 8 Bits Static Ran...


Fujitsu

MB8287

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Description
April 1990 Edition 2.0 DATA SHEET MB8287-251-35 CMOS 288K-BIT HIGH-SPEED SRAM cO FUJITSU 32K Words x 8 Bits Static Random Access Memory with Automatic Power Down The Fujitsu MB8287 is a 32,768 words x 8 bits static random access memory with parity generator and checker, and fabricated with CMOS technology. To obtain a smaller chip size, the cell uses NMOS transistors and resistors. This device is housed in a 300 mil DIP package with low (605 mW max.) power dissipation. All pins are TTL compatible and a single +5 V power supply is required. A separate chip select ~ pin simplffies multipackage systems design by permitting the selection of an individual package when outputs are OR-tied, and then automatically powering down the other deselected packages. The MB8287 offers low power dissipation, low cost, and high performance. Organization: 32,768 words x 8 bits Static operation: no clocks or timing strobe required Access time: tM -I.\csl _25 ns max, tACS2 - 14 ns max. (M...




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