MB8279RT

April 1990 Edition 3.0 DATA SHEET MB8279RT-201-25 CMOS 72K-BIT HIGH-SPEED SRAM cP FUJITSU 8K Words x 9 Bits Synchronous CMOS Static Random Access Memory wHh Automatic Power Down The Fujitsu MB8279RT is a 8,192 words x 9 bits static random access memory fabricated with a CMOS silicon gate process. Write operation is initiated by an internal wr~e pulse generator, which is driven by the ClK input; therefore, external control of wr~e pulse width is not necessary. Compared to the traditional RAM, the MB8279RT provides improved system level cycle time because signal skews are not involved. The MB8279RT is housed in 32-pin plastic skinny DIP and SOP packages. All pins are TTL compatible and a single +5 V power supply is required. Organization: Access time: 8,192 words x 9 bits W:L - 20 ns max. (MB8279RT-20) I.u:s2 - tPE2 - 10 ns max. W:L - 25 ns max. (MB8279RT-25) I.u:s2 -!pez -12 ns max. Registered addresses, CS,. WE and data inputs Write cancel function by asynchrono...