2N508A (GERMANIUM)
CASE 31 (1)
(TO-5) Base connected to case
PNP Germanium Milliwatt transistor designed for low noise...
2N508A (GERMANIUM)
CASE 31 (1)
(TO-5) Base connected to case
PNP Germanium Milliwatt
transistor designed for low noise audio and switching applications.
Small-Signal Current Gain hfe = 180 (Max) @IE = 1.0 mAdc
Low Noise Figure Applications -
NF = 5.0 dB (Max) @ IC = 1.0 mAdc
MAXIMUM RATINGS
Rating
*Collector-Emitter Voltage (RBE = 10 kohms)
*Collector-Emitter Voltage
*Collector-Base Voltage
*Emitter-Base Voltage
*Collector Current
*Total Device Dissipation @TA = 25° C
Derate above 25°C Operating and Storage Junction
Temperature Range *Indicates JEDEC Registered Data
Symbol
VCER
Value
25
Unit
Vdc
VCES VCB VEB
IC PD
TJ' Tstg
30 Vdc
30 Vdc
10 Vdc
200 mAdc
200 2.67
-65 to +100
mW mW/oC
°c
2-43
2N508A (continued)
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS 'Collector-Emitter Breakdown Voltage
(IC = 600 /lAdc, RBE = 10 k ohms)
'Collector Cutoff Current (VCB = 25 Vdc, IE = 0)
'Emitter Cutoff Current (VBE = 10 Vdc...
