2N1175
FOR SPECIFICATIONS, SEE 2N1413-2N1415 DATA.
2N1185 thru 2N1188(GERMANIUM)
PNP germanium transistors for high-ga...
2N1175
FOR SPECIFICATIONS, SEE 2N1413-2N1415 DATA.
2N1185 thru 2N1188(GERMANIUM)
PNP germanium
transistors for high-gain audio amplifier and switching applications.
CASE 31 (1)
(TO-5)
All leads isolated from case
MAXIMUM RATINGS
Rating
Collector-Base Voltage 2N1l85 2N1l86 -2N1l88
Collector-Emitter Voltage 2N1l85 2N1186-2N1188
Emitter-Base Voltage
Collector Current *
(Continuous)
Storage and Operating Temperature
Collector Dissipation in, Ambient (Derate 2.67 mW/oC above 25°C)
Thermal Resistance Junction to Ambient
Thermal Resistance (Junction to Case)
*Limited by power dissipation
Symbol
VCB
VCER
VEB IC
Tstg' TJ PD (JJA (JJC
Value
45 60
30 45 30 500*
-65 to +100 200
0.375
0.250
Unit
Vdc
Vdc
Vdc mAdc
°c mW °C/mW °C/mW
2-173
2N 1185 thru 2N 1188 (continued)
ELECTRICAL CHARACTERISTICS ITA = 25°C unless otherwise noted)
Characteristic
Collector-Base Cutoff Current (V CB = 30 V, IE = 0) (VCB = 45 V, IE = 0) (V CB = 60 V, IE = 0) (VCB=10V,IE=0,TA=+71°C)
2N1185 2N1186 thru 2N...