Document
2N1131 (SILl.CON)
2N1131JAN AVAILABLE
2Nl131A 2N1991
PNP SILICON ANNULAR TRANSISTORS
· .. designed for medium-speed switching and amplifier applications where low DC current gain is essential.
• Low DC Current Gain -
hFE =45 (Max) @ IC = 150 mAdc - 2N1131,A
• Turn-On Time - ton = 45 ns (Max) - 2N 1131A • Turn-Off Time - toff = 35 ns (Max) - 2N1131A
*MAXIMUM RATINGS
Rating
Symbol
Cpllector·Emitter Voltage
Collector·Emitter Voltage Collector·Ba•• Voltage
Emitter·Base Voltage
Collector Current - Continuous
Total Device Dissipation@TA==2SoC Derate above 250 e
Total Device Dissipation@Te= 250 e @TC=I000C
Derate above 25°C
VeEO VeER VeB VEB
Ie
Po
Po
Operating Junction Temperature Range Storage Temperature Range
TJ T.tg
2N1131 2N1131A 2N1991
35 40
20
50 50
-
50 60
30
5.0 5.0
5.0
600 600
600
0.6 0.6 4.0 4.0
0.6 4.8
2.0 2.0 1.0 1.0 13.3 13.3
2.0 1.0 16
175 175
150
-65 to +200
-65 to +150
Unit Vde
Vde Vde
Vde mAde Watt mW/oC
Watts Watt mW/oC
°c °c
T.