2N1008

2N1008, A, B(GERMANIUM) 2Nl008B JAN AVAILABLE CASE31(~,1)_~(TO-5) All ,leads isolated PNP germanium transistor for audio driver and medium speed switching applications. MAXIMUM RATINGS Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation TA = 25°C derate TC = 25°C derate Junction and storage Temperature Range Symbol VCB VCEO VEB Ie IB PD TJ , T stg 2110118 2N1008A 2N10118B 20 40 60 20 40 60 15 300 30 200 2.7S 300 4.0 -65 to +100 Unit Vdc Vdc Vdc mAdc mAdc mW mW/oC mW mW/oC °c ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristics :Collector Leakage Current ~~g: ~~ ~~~! TA = S50C) ~:~~~: (VCB= 25 Vdc) 2N100SA (VCB = 25 Vdc, TA = S50C)2N100SA (VCB = 45 Vdc) 2N100SB (VCB = 45 Vdc, ~A = S50C) 2N100SB Emitter Leakage Current (VEB = 10 Vdc) 2N100S ZN100SA 2N100SB SymbDI leBO lEBO Min Typ ------------------ -5-.-0 -5-.-0 7.0 --- --------- ,--5--.--0 Mu UNIT /lAdc 10 ...