Document
2N869A(SILICON)
2N869A JAN/JANTX Available
MM869B
PNP SILICON ANNULAR TRANSISTORS
PNP silicon annular low-power transistor designed for mediumspeed, saturated switching applications.
• Collector-Emitter Breakdown Voltage -
= =BVCEO 30 Vdc (Min) @ IC 10 mAdc - MM869B
• Low Collector-Emitter Saturation Voltage VCE(sat) = 0.2 Vdc (Max) @ IC = 30 mAde
• Turn-On Time -
ton =10 ns (Typ) @IC =30 mAdc - MM869B
PNP SILICON SWITCHING TRANSISTORS
*MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC =25°C
Derate above 25°C Operating and Storage Junction
Temperature Range
·2N869A JEOEC Registered Data.
Symbol VCEO VCB VEB
IC
Po
Po
TJ, Tstg
2N869A MM869B 18 30 25 30 5.0 200 360 2.1 1.2 6.86
-65 to +200
Unit Vde
Vde
Vde mAde mW mW/oC
Watt. mW/oC
°c
FIGURE 1 - SWITCHING TIME TEST CIRCUIT
Pulse Source Ir< 1.0ns
f'W > 200 ns
Zin = 50 n. 0.1 ".