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MM869B Dataheets PDF



Part Number MM869B
Manufacturers Motorola
Logo Motorola
Description PNP SILICON ANNULAR TRANSISTORS
Datasheet MM869B DatasheetMM869B Datasheet (PDF)

2N869A(SILICON) 2N869A JAN/JANTX Available MM869B PNP SILICON ANNULAR TRANSISTORS PNP silicon annular low-power transistor designed for mediumspeed, saturated switching applications. • Collector-Emitter Breakdown Voltage - = =BVCEO 30 Vdc (Min) @ IC 10 mAdc - MM869B • Low Collector-Emitter Saturation Voltage VCE(sat) = 0.2 Vdc (Max) @ IC = 30 mAde • Turn-On Time - ton =10 ns (Typ) @IC =30 mAdc - MM869B PNP SILICON SWITCHING TRANSISTORS *MAXIMUM RATINGS Rating Collector-Emitter Voltage Collect.

  MM869B   MM869B



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2N869A(SILICON) 2N869A JAN/JANTX Available MM869B PNP SILICON ANNULAR TRANSISTORS PNP silicon annular low-power transistor designed for mediumspeed, saturated switching applications. • Collector-Emitter Breakdown Voltage - = =BVCEO 30 Vdc (Min) @ IC 10 mAdc - MM869B • Low Collector-Emitter Saturation Voltage VCE(sat) = 0.2 Vdc (Max) @ IC = 30 mAde • Turn-On Time - ton =10 ns (Typ) @IC =30 mAdc - MM869B PNP SILICON SWITCHING TRANSISTORS *MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC =25°C Derate above 25°C Operating and Storage Junction Temperature Range ·2N869A JEOEC Registered Data. Symbol VCEO VCB VEB IC Po Po TJ, Tstg 2N869A MM869B 18 30 25 30 5.0 200 360 2.1 1.2 6.86 -65 to +200 Unit Vde Vde Vde mAde mW mW/oC Watt. mW/oC °c FIGURE 1 - SWITCHING TIME TEST CIRCUIT Pulse Source Ir< 1.0ns f'W > 200 ns Zin = 50 n. 0.1 ".


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