2N2330 (SILICON) 2N2331
NPN silicon annular Star transistors for low-level
DclAC chopper applications.
CASE 22
(TO-lS)...
2N2330 (SILICON) 2N2331
NPN silicon annular Star
transistors for low-level
DclAC chopper applications.
CASE 22
(TO-lS)
2N2331
CASE 31
(TO-S)
2N2330
Collector connected to cue
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation @ TA = 25°C
Derate above 25°C Total Device Dissipation @ TC = 25°C
Derate above 250 C Operating Junction Temperature Range Storage Temperature Range
Symbol
VCEO VCB VEB IC PD
PD
TJ Tstg
2N2330 (TO-S)
20
1N2331 (TO-18)
20
30 30
5.0 5.0
500
0.8 5_33
0.5 3_33
3.0 1.8 20 12
-65 to + 175
-65 to + 200
Unit
Vdc Vdc Vdc mAdc Watt mW/oC Watts mW/oC °c °c
2-279
2N2330, 2N2331 (continued)
=ELECTRICAL CHARACTERISTICS (TA 2S0C unless otherwise noted)
I Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC = 1 mAdc, IB = 0)
Collector-Base Breakdown Voltage
(IC = 10 MAdc, IE = 0)
Emitter-Base Breakdown Voltage
(IE = 10 MAdc, IC = 0)
Collector Cut...
