Document
2N2256, 2N2257 (SILICON) 2N2258 {GERMANIUM}
2N2259 (GERMANIUM)
CASE 22
(TO-18)
Collector connected to cese
NPN silicon and PNP germanium mesa complementary transistors for high- speed non- saturated switching applic ations.
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Total Device Dissipation @ TA = 25°C
Derate above 25°C Total Device Dissipation @ TC = 25°C
Derate above 25°C Operating and storage Junction
Temperature Range
Symbol
VCEO VCB VEB IC PD
PD
2N2256 2N2257
7.0
7.0 1.0
100 300 2.0
1000 6.67
TJ , Tstg -65 to +175
2N2258 2N2259
7.0
7.0 1.0 100 150 2.0
300 4.0
Unit
Vdc Vdc Vdc mAdc mW mW/oC mW mW/oC
-65 to +100
°c
TRANSISTOR SELECTION CHART
TYPE
2N2256 2N2257 2N2258 2N2259
TYPE NPN PNP
X X
X X
2-266
=hFE @ Ie 25 rnA
20 40
X X
X X
2N2256 thru 2N2259 (continued)
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakd.