2N2218I A, 2N2219I A 2N2221 I A{sILiCON)
2N2222,A, 2N5581 , 2N5582
NPN SILICON ANNULAR HERMETIC TRANSISTORS
. . . widel...
2N2218I A, 2N2219I A 2N2221 I A{sILiCON)
2N2222,A, 2N5581 , 2N5582
NPN SILICON ANNULAR HERMETIC
TRANSISTORS
. . . widely used "Industry Standard"
transistors for applications as medium-speed switches and as amplifiers from audio to VHF frequencies.
DC Current Gain Specified - 1.0 to 500 mAdc Low Collector-Emitter Saturation Voltage -
VCE(sat) @ IC = 500 mAdc
= 1.6 Vdc (Max) - Non-A Suffix
= 1.0 Vdc (Max) - A-Suffix High Current-Gain-Bandwidth Product -
fT = 250 MHz (Min) @ IC = 20 mAdc - All Types Except = 300 MHz (Min) @ IC = 20 mAdc - 2N2219A, 2N2222A, 2N5582
Complements to
PNP 2N2904,A thru 2N2907,A JAN/JANTX Available for all devices
NPN SILICON SWITCHING AND AMPLIFIER
TRANSISTORS
CASE 31 (1) TO·5
2N221B,A 2N2219.A
SELECTION 3UIDE
Device Type
2N2218 2N2219
2N2221 2N2222
2N5581 2N5582
2N2218A 2N2219A
2N2221A 2N2222A
BVeEO le= 10mAdc
Volts 30
30
40
40
40
Characteristic
hFE
Ie =150mAdc Ie = 500 mAdc
MinIMax
Min
40/120 100/300
40/120 100/300
20 30
20 30
...
