19832N (SILICON) 2N1984
NPN silicon annular small-signal transistor.
CASE 31
(TO·5) Collector connected to cas.
MAXIMU...
19832N (SILICON) 2N1984
NPN silicon annular small-signal
transistor.
CASE 31
(TO·5) Collector connected to cas.
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Device Dissipation @TA = 25° C
Derate above 25°C
Total Device Dissipation@ TC = 25°C
Derate above 25° C Operating and Storage Junction
Temperature Range
Symbol Value Unit
VCEO
25
Vdc
VCB
50
Vdc
VEB
5.0
Vdc
IC 1.0 Adc
PD 0.6 Watt 4.8 mW/oC
PD 2.0 Watts 16 mW/oC
TJ , T stg -65 to +150 °c
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Symbol
8JC 8JA
Max
62.5 208
Unit
°C/W °C/W
2-231
2N1983, 2N1984 (continued)
=ELECTRICAL CHARACTERISTICS (T. 25'C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter SUstaining Voltage (11 (IC = 100 mAde, IB = 0)
Collector-Emitter Sustaining Voltage 111 (IC = 100 mAde, RBE ~ 10 ohms)
Collector Cutoff CUrrent
(VCB...
