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2N1959

Part Number	2N1959
Manufacturer	Motorola
Description	NPN Transistor
Published	Nov 7, 2018
Detailed Description	2N1959 (SILICON) CASE 31 (TO·S) NPN silicon annular transistor designed for highspeed, medium-power saturated switchin...
Datasheet	2N1959 PDF File

Overview

2N1959 (SILICON) CASE 31 (TO·S) NPN silicon annular transistor designed for highspeed, medium-power saturated switchingapplications.
Collector connected to case MAXIMUM RATINGS Rating Collector-Emitter Voltage RBE = 10 ohms Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating Junction Temperature Range Storage Temperature Range Symbol VCER VCB VEB Ie Po PD TJ Tstg Value 40 60 5 500 600 4,0 2.
0 1.
3 -65 to +175 -65 to +200 Unit Vdc Vdc Vdc mAdc mW mW/oC watts mW/oC °c °c 2-228 2N 1959 (continued) ELECTRICAL CHARACTERISTICS (1, = 25·C ",.
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