18932N (SILICON)
2N240S
NPN silicon annular transistors designed for mediumpower amplifier and switching applications.
...
18932N (SILICON)
2N240S
NPN silicon annular
transistors designed for mediumpower amplifier and switching applications.
CASE 31
(TO-5)
Collector connected to case
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Device Dissipation @ TA = 25"C Derate above 25"C
Total Device Dissipation @ TC - 25"C Derate above 25"C
Operating and Storage Junction Temperature Range
Symbol
VCEO VCER VCS VES
IC PD
PD
T J' T stg
2N1893 2N240S Unit
80 90 Vde
100 140 Vde
120 Vde
7.0 Vde
0.5 1.0 Ade
0.8 1.0
4.57
5.71
3.0 5.0
17.2
28.6
-65 to +200
Watt mW/'C
Watts mW/'C
'c
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance. Junction to Case Thermal Resistance. Junction to Ambient
Symbol eJC
eJA
2N1893
58.3
219
2N240S Unit
35 'C/W
175 'C/W
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage' (IC = 30 mA...
