2N1413thru 2N1415 (GERMANIUM)
2Nl175
CASE 31(1)
(TO-5)
Base connected to case
PNPgermaniumtransistorsfor general-purpo...
2N1413thru 2N1415 (GERMANIUM)
2Nl175
CASE 31(1)
(TO-5)
Base connected to case
PNPgermanium
transistorsfor general-purpose lowfrequency amplifier and switching applications. Characteristic curves similar to 2N524-2N527 series.
MAXIMUM RATINGS
Rating
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Junction and Storage Temperature Power Dissipation at 25°C Ambient
Symbol
VCB VCEO VEB
IC Tj & Tstg
Po
Value
35 25 10 500 -65 to +100 225
Unit
Vdc Vdc Vdc mAdc °C mW
ELECTRICAL CHARACTERISTICS· (TA; 250 C unless otherwise noted)
Characteristics
Collector Cutoff Current VCB ; 30 Vdc, IE; 0
Emitter Cutoff Current VEB ; 10 Vdc, IC ; 0
Collector-Emitter Voltage
IC; 0.6 mAde, RBE = 10 K
Punch-Thru Voltage
DC Current Gain
IC = 20 mAde, VCE =1 Vdc
2N1413 2N1414 2N1415 2N1175
Symbol
ICBO
Min
-
lEBO BVCER
-
25
Vpt hFE
2-189
25
25 34 53 70
Max
12
10
-
-
42 65 90 140
Unit
pAdc
pAdc Vdc Vdc
-
2N1413 thru 2N1415, 2Nl175 (continued)
ELECTRICAL CHA...