2N2947(SILICON) 2N2948
CASE 1
(TO-3)
Collector connected to case
NPN silicon annular transistors for power amplifier a...
2N2947(SILICON) 2N2948
CASE 1
(TO-3)
Collector connected to case
NPN silicon annular
transistors for power amplifier applications to 100 MHz.
MAXIMUM RATINGS*
Rating
Collector- Base Voltage Collector-Emitter Voltage Emitter - Base Voltage Collector- Current (continuous) Base-Current (continuous) Power Input (Nominal) Power Output (Nominal) Total Device Dissipation
@ 25 °C Case Temperature
Derating Factor above 25 0 C Junction Temperature Storage Temperature Range
Symbol
VCB VCES VEB IC IB P.
In
Pout PD
2N2947 2N2948 60 40 60 40 3.0 2.0 1.5 500 5.0 20.0 25.0
Unit
Vdc Vdc Vdc Adc mAdc Watts Watts Watts
TJ Tst!!:
167 175
-65to+175
mWjOC
°c °c
*The maximum ratings as given for de conditions can be exceeded on a pulse basis. See electrical characteristics.
2-377
2N2947, 2N2948 (Continued)
ELECTRICAL CHARACTERISTICS (TA =2SOC unlessotharwise noted)
Characteristic
Collector- Emitter Sustain Voltage
Collector- EmitterOpen Base Sustain Voltage
Collector- Emitte~ Current
Symbo...
