2N2800 (SILICON)
2N2801 2N2837 2N2838
"CASE 22 (TO-18)
2N2837 2N2838
PNP silicon annular transistors for medium-speed ...
2N2800 (SILICON)
2N2801 2N2837 2N2838
"CASE 22 (TO-18)
2N2837 2N2838
PNP silicon annular
transistors for medium-speed switching applications_
2N2800 2N2801
Collector connected to case
MAXIMUM RATINGS
Rating
Collector-Base Voltage
Symbol
VCB
Value
50
Unit
Vdc
Collector-Emitter Voltage Emitter-Base Voltage
VCEO
35
Vdc
VEB s.o Vdc
Collector Current
IC 600 rnA
Total Device Dissipation @ 25'C Ambient Temperature 2N2600, 2N2601 - TO-5 Derating Factor Above 25'C
2N2637, 2N2636 - TO-16 Derating Factor Above 25'C
Total Device Dissipation @ 25'C Case Temperature 2N2600, 2N2601 - TO-5 Derating Factor Above 25'C
2N2637, 2N2636 - TO-16 Derating Factor Above 25'C
Junction Temperature, Operating
Storage Temperature
PD
PD
TJ Tstg
0.6 4.57
O. 5
2.66
3.0
17.3 1.6 10.3
+200
-65 to +200
Watt mW/'C Watt mW/'C
Watts mW/'C Watts mW/'C
'c
'c
DELAY AND RISE TIME TEST CIRCUIT
INPUT
=10 SOn
PRf = 150 PPS RISE TIME,,;; 2 ns
-_:_U12~ f--
500 50
64
TO OSC ILLOSCOPE
l,.RISE TIME ""'5ns = 10 M!...
