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2N2927

PNP Transistor

Description

2N2696 (SILICON) 2N2927 PNP SILICON ANNULAR TRANSISTORS designed for use in medium-speed, non-saturated switching applications_ High Collector-Emitter Breakdown Voltage - = =BVCEO 25 Vdc @IC 100/!Adc High Collector-Base Breakdown Voltage BVCBO = 25 Vdc@ IC = 100/!Adc MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Sase Voltage Emitter-Base V...

Motorola

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